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RFP BYI-1 BYI1 Byistors For Linear Power Amplifiers BNIB / NOS
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<p> The BYI-1 is a semiconductor device specifically designed for use in linear bias circuitry. The byistor acts as a low impedance D.C. bias source which has two models for thermal composition.  </p><div align="left"> </div><p><span id="ctl00_ContentPlaceHolder1_ProductDetail1_lb…
Description
<p> The BYI-1 is a semiconductor device specifically designed for use in linear bias circuitry. The byistor acts as a low impedance D.C. bias source which has two models for thermal composition. 
</p><div align="left"> </div><p><span id="ctl00_ContentPlaceHolder1_ProductDetail1_lblSellingCopy">
</span><span id="ctl00_ContentPlaceHolder1_ProductDetail1_lblSellingCopy">Maximum Power Dissipation@25°c: 11Watts</span>
BVees Collector to Emitter Voltage: 55Volts
BVebo Emitter to Base Voltage: 4.0Volts
IC Collector Current: 0.7A
Operating Junction Temperature: +150°C</p><p> </p>
</p><div align="left"> </div><p><span id="ctl00_ContentPlaceHolder1_ProductDetail1_lblSellingCopy">
</span><span id="ctl00_ContentPlaceHolder1_ProductDetail1_lblSellingCopy">Maximum Power Dissipation@25°c: 11Watts</span>
BVees Collector to Emitter Voltage: 55Volts
BVebo Emitter to Base Voltage: 4.0Volts
IC Collector Current: 0.7A
Operating Junction Temperature: +150°C</p><p> </p>