Infineon / Eupec FZ1600R12KE3 Insulated Gate Bipolar Transistor Modules IGBT / Power Semiconductor 1200V 1600A

Infineon / Eupec FZ1600R12KE3 Insulated Gate Bipolar Transistor Modules IGBT / Power Semiconductor -1200V 1600A BNIB /  NOS

Specifications

• Item Number: FZ1600R12KE3
• Manufacturer:  Infineon, Formerly Eupec
• Type: Single
• Collector Emitter Voltage / Vces: 1,200 Volts
• DC Collector Current / Ic: 1,600 Amps, nominal
• Gate Emitter Peak Voltage / Vges:  +/-20 V
• Collector Emitter Cut-off Current : 5 mA max
• Gate Emitter Leakage Current / Iges: 400 nA
• Gate Threshold Voltage / Vge(th):  5 min, 6.5 V max
• Collector Emitter Saturation Voltage / Vce(sat): 2.15 Volts max
• Dimensions HxWxD: 38 x 130 x 140 mm