Home›Products›Active Components›Transistors, MOSFETs & IGBTs›BFQ68 NPN Wideband Transistor 4 GHz, BNIB/NOS
BFQ68 NPN Wideband Transistor 4 GHz, BNIB/NOS
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<p> NPN transistor mounted in a four-lead dual-emitter SOT122A envelope with a ceramic cap. All leads are isolated from the stud. Diffused emitter-ballasting resistors and the application of gold sandwichmetallization ensure an optimum temperature profile and excellent reliability properties. I…
Description
<p> NPN transistor mounted in a four-lead dual-emitter SOT122A envelope with a ceramic cap. All leads are isolated from the stud. Diffused emitter-ballasting resistors and the application of gold sandwichmetallization ensure an optimum temperature profile and excellent reliability properties. It features very high output voltage capabilities.</p><div data-canvas-width="219.51146666666668">
</div><div data-canvas-width="219.51146666666668">Collector-emitter Voltage: Open Base 18V</div><div data-canvas-width="219.51146666666668">Collector Current: -300mA</div><div data-canvas-width="219.51146666666668">Total Power Dissipation: up to Tc = 110°C - 4.5W</div><div data-canvas-width="219.51146666666668">Transistion Freqquency: 4 GHz</div><div data-canvas-width="219.51146666666668">Output Voltage: 1.6V</div><p> </p>
</div><div data-canvas-width="219.51146666666668">Collector-emitter Voltage: Open Base 18V</div><div data-canvas-width="219.51146666666668">Collector Current: -300mA</div><div data-canvas-width="219.51146666666668">Total Power Dissipation: up to Tc = 110°C - 4.5W</div><div data-canvas-width="219.51146666666668">Transistion Freqquency: 4 GHz</div><div data-canvas-width="219.51146666666668">Output Voltage: 1.6V</div><p> </p>